型号 SI3441BDV-T1-GE3
厂商 Vishay Siliconix
描述 MOSFET P-CH 20V 2.45A 6-TSOP
SI3441BDV-T1-GE3 PDF
代理商 SI3441BDV-T1-GE3
标准包装 3,000
系列 TrenchFET®
FET 型 MOSFET P 通道,金属氧化物
FET 特点 逻辑电平门
漏极至源极电压(Vdss) 20V
电流 - 连续漏极(Id) @ 25° C 2.45A
开态Rds(最大)@ Id, Vgs @ 25° C 90 毫欧 @ 3.3A,4.5V
Id 时的 Vgs(th)(最大) 850mV @ 250µA
闸电荷(Qg) @ Vgs 8nC @ 4.5V
功率 - 最大 860mW
安装类型 表面贴装
封装/外壳 6-TSOP(0.065",1.65mm 宽)
供应商设备封装 6-TSOP
包装 带卷 (TR)
同类型PDF
SI3442BDV-T1-E3 Vishay Siliconix MOSFET N-CH 20V 3A 6-TSOP
SI3442BDV-T1-E3 Vishay Siliconix MOSFET N-CH 20V 3A 6-TSOP
SI3442BDV-T1-E3 Vishay Siliconix MOSFET N-CH 20V 3A 6-TSOP
SI3442BDV-T1-GE3 Vishay Siliconix MOSFET N-CH 20V 3A 6-TSOP
SI3442CDV-T1-GE3 Vishay Siliconix MOSFET N-CH 20V D-S 6TSOP
SI3442CDV-T1-GE3 Vishay Siliconix MOSFET N-CH 20V D-S 6TSOP
SI3442CDV-T1-GE3 Vishay Siliconix MOSFET N-CH 20V D-S 6TSOP
SI3442DV Fairchild Semiconductor MOSFET N-CH 20V 4.1A SSOT-6
SI3443BDV-T1-E3 Vishay Siliconix MOSFET P-CH 20V 3.6A 6-TSOP
SI3443BDV-T1-E3 Vishay Siliconix MOSFET P-CH 20V 3.6A 6-TSOP
SI3443BDV-T1-E3 Vishay Siliconix MOSFET P-CH 20V 3.6A 6-TSOP
SI3443BDV-T1-GE3 Vishay Siliconix MOSFET P-CH 20V 3.6A 6-TSOP
SI3443CDV-T1-E3 Vishay Siliconix MOSFET P-CH 20V 5.97A 6TSOP
SI3443CDV-T1-E3 Vishay Siliconix MOSFET P-CH 20V 5.97A 6TSOP
SI3443CDV-T1-E3 Vishay Siliconix MOSFET P-CH 20V 5.97A 6TSOP
SI3443CDV-T1-GE3 Vishay Siliconix MOSFET P-CH 20V 5.97A 6TSOP
SI3443CDV-T1-GE3 Vishay Siliconix MOSFET P-CH 20V 5.97A 6TSOP
SI3443CDV-T1-GE3 Vishay Siliconix MOSFET P-CH 20V 5.97A 6TSOP
SI3443DV International Rectifier MOSFET P-CH 20V 4.4A 6-TSOP
SI3443DV Fairchild Semiconductor MOSFET P-CH 20V 4A SSOT-6